Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / MS1003

Product Introduction

MS1003

Part Number
MS1003
Manufacturer/Brand
Microsemi Corporation
Description
RF TRANS NPN 18V 175MHZ M111
Category
Transistors - Bipolar (BJT) - RF
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
2790pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number MS1003
Datasheet MS1003 datasheet
Description RF TRANS NPN 18V 175MHZ M111
Manufacturer Microsemi Corporation
Series -
Part Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 18V
Frequency - Transition 136MHz ~ 175MHz
Noise Figure (dB Typ @ f) -
Gain 6dB
Power - Max 270W
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 5A, 5V
Current - Collector (Ic) (Max) 20A
Operating Temperature 200°C (TJ)
Mounting Type Surface Mount
Package / Case M111
Supplier Device Package M111

Latest Products for Transistors - Bipolar (BJT) - RF

64054H

Microsemi Corporation

RF POWER TRANSISTOR

64062

Microsemi Corporation

RF POWER TRANSISTOR

64065

Microsemi Corporation

RF POWER TRANSISTOR

64077

Microsemi Corporation

RF POWER TRANSISTOR

66068B

Microsemi Corporation

RF POWER TRANSISTOR

66082B

Microsemi Corporation

RF POWER TRANSISTOR