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Part Number | BSO615CT |
Datasheet | BSO615CT datasheet |
Description | MOSFET N/P-CH 60V 3.1A/2A 8SOIC |
Manufacturer | Infineon Technologies |
Series | SIPMOS® |
Part Status | Obsolete |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 3.1A, 2A |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id | 2V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs | 22.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | PG-DSO-8 |