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Part Number | IPI80P04P4L06AKSA1 |
Datasheet | IPI80P04P4L06AKSA1 datasheet |
Description | MOSFET P-CH TO262-3 |
Manufacturer | Infineon Technologies |
Series | Automotive, AEC-Q101, OptiMOS™ |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.7 mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 104nC @ 10V |
Vgs (Max) | +5V, -16V |
Input Capacitance (Ciss) (Max) @ Vds | 6580pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 88W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3-1 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |