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Product Introduction

IPC302N08N3X1SA1

Part Number
IPC302N08N3X1SA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 80V 1A SAWN ON FOIL
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
OptiMOS™
Quantity
728pcs Stock Available.

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Product Specifications

Part Number IPC302N08N3X1SA1
Description MOSFET N-CH 80V 1A SAWN ON FOIL
Manufacturer Infineon Technologies
Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 1A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Mounting Type Surface Mount
Supplier Device Package Sawn on foil
Package / Case Die

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