Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SSM6K211FE,LF
Part Number | SSM6K211FE,LF |
Datasheet | SSM6K211FE,LF datasheet |
Description | MOSFET N-CH 20V 3.2A ES6 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSIII |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 47 mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 10.8nC @ 4.5V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | ES6 |
Package / Case | SOT-563, SOT-666 |