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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / EPC2100ENG
Part Number | EPC2100ENG |
Description | GAN TRANS 2N-CH 30V BUMPED DIE |
Manufacturer | EPC |
Series | eGaN® |
Part Status | Discontinued at Digi-Key |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 40A (Ta) |
Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 4mA, 2.5V @ 16mA |
Gate Charge (Qg) (Max) @ Vgs | 4.9nC @ 15V, 19nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 15V, 1960pF @ 15V |
Power - Max | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |