Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / C3M0120090D
Part Number | C3M0120090D |
Datasheet | C3M0120090D datasheet |
Description | 900V 120 MOHM G3 SIC MOSFET |
Manufacturer | Cree/Wolfspeed |
Series | C3M™ |
Part Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 155 mOhm @ 15A, 15V |
Vgs(th) (Max) @ Id | 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 17.3nC @ 15V |
Vgs (Max) | +18V, -8V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 600V |
FET Feature | - |
Power Dissipation (Max) | 97W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |