Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / HN3C10FUTE85LF
Part Number | HN3C10FUTE85LF |
Description | RF TRANS 2 NPN 12V 7GHZ US6 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Active |
Transistor Type | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 7GHz |
Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
Gain | 11.5dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
Current - Collector (Ic) (Max) | 80mA |
Operating Temperature | - |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |