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Product Introduction

HN3C10FUTE85LF

Part Number
HN3C10FUTE85LF
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
RF TRANS 2 NPN 12V 7GHZ US6
Category
Transistors - Bipolar (BJT) - RF
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
2963pcs Stock Available.

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Product Specifications

Part Number HN3C10FUTE85LF
Description RF TRANS 2 NPN 12V 7GHZ US6
Manufacturer Toshiba Semiconductor and Storage
Series -
Part Status Active
Transistor Type 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Gain 11.5dB
Power - Max 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA, 10V
Current - Collector (Ic) (Max) 80mA
Operating Temperature -
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6

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