
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTC115EEF,115

| Part Number | PDTC115EEF,115 |
| Datasheet | PDTC115EEF,115 datasheet |
| Description | TRANS PREBIAS NPN 250MW SC89 |
| Manufacturer | NXP USA Inc. |
| Series | - |
| Part Status | Obsolete |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 20mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| Frequency - Transition | - |
| Power - Max | 250mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-89, SOT-490 |
| Supplier Device Package | SC-89 |