Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / APTM100DA33T1G

Product Introduction

APTM100DA33T1G

Part Number
APTM100DA33T1G
Manufacturer/Brand
Microsemi Corporation
Description
MOSFET N-CH 1000V 23A SP1
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
36pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number APTM100DA33T1G
Description MOSFET N-CH 1000V 23A SP1
Manufacturer Microsemi Corporation
Series -
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 396 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 305nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 7868pF @ 25V
FET Feature -
Power Dissipation (Max) 390W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SP1
Package / Case SP1

Latest Products for Transistors - FETs, MOSFETs - Single

SQ4483BEEY-T1_GE3

Vishay Siliconix

MOSFET P-CHANNEL 30V 22A 8SOIC

SQ4483EY-T1_GE3

Vishay Siliconix

MOSFET P-CHANNEL 30V 30A 8SOIC

IAUS165N08S5N029ATMA1

Infineon Technologies

MOSFET N-CH 80V 660A PG-HSOG-8-1

FDP038AN06A0-F102

ON Semiconductor

MOSFET N-CH 60V 80A TO220-3

TSM80N1R2CL C0G

Taiwan Semiconductor Corporation

MOSFET N-CH 800V 5.5A TO262S

TSM70N600ACL X0G

Taiwan Semiconductor Corporation

MOSFET N-CH 700V 8A TO262S

Related Products