
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / GA50JT06-258

| Part Number | GA50JT06-258 | 
| Datasheet | GA50JT06-258 datasheet | 
| Description | TRANS SJT 600V 100A | 
| Manufacturer | GeneSiC Semiconductor | 
| Series | - | 
| Part Status | Active | 
| FET Type | - | 
| Technology | SiC (Silicon Carbide Junction Transistor) | 
| Drain to Source Voltage (Vdss) | 600V | 
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | - | 
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 50A | 
| Vgs(th) (Max) @ Id | - | 
| Gate Charge (Qg) (Max) @ Vgs | - | 
| Vgs (Max) | - | 
| Input Capacitance (Ciss) (Max) @ Vds | - | 
| FET Feature | - | 
| Power Dissipation (Max) | 769W (Tc) | 
| Operating Temperature | -55°C ~ 225°C (TJ) | 
| Mounting Type | Through Hole | 
| Supplier Device Package | TO-258 | 
| Package / Case | TO-258-3, TO-258AA |