Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFT60N65X2HV
Part Number | IXFT60N65X2HV |
Datasheet | IXFT60N65X2HV datasheet |
Description | MOSFET N-CH |
Manufacturer | IXYS |
Series | HiPerFET™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 108nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 6300pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 780W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-268HV |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |