Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / H7N1002LSTL-E
Part Number | H7N1002LSTL-E |
Datasheet | H7N1002LSTL-E datasheet |
Description | MOSFET N-CH 100V LDPAK |
Manufacturer | Renesas Electronics America |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 75A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 37.5A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 155nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 9700pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-LDPAK |
Package / Case | SC-83 |