Product Introduction
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Product Specifications
Part Number |
STL3N65M2 |
Datasheet |
STL3N65M2 datasheet |
Description |
MOSFET N-CH 650V 2.3A POWERFLAT |
Manufacturer |
STMicroelectronics |
Series |
MDmesh™ M2 |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
650V |
Current - Continuous Drain (Id) @ 25°C |
2.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
1.8 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
5nC @ 10V |
Vgs (Max) |
±25V |
Input Capacitance (Ciss) (Max) @ Vds |
155pF @ 100V |
FET Feature |
- |
Power Dissipation (Max) |
22W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PowerFlat™ (3.3x3.3) |
Package / Case |
8-PowerVDFN |
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