Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2N5416UA/TR
Part Number | 2N5416UA/TR |
Datasheet | 2N5416UA/TR datasheet |
Description | POWER BJT |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 300V |
Vce Saturation (Max) @ Ib, Ic | 2V @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
Power - Max | - |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 4-SMD, No Lead |
Supplier Device Package | UA |