
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2N5416UA/TR

| Part Number | 2N5416UA/TR |
| Datasheet | 2N5416UA/TR datasheet |
| Description | POWER BJT |
| Manufacturer | Microsemi Corporation |
| Series | - |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 300V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Power - Max | - |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD, No Lead |
| Supplier Device Package | UA |