Product Introduction
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See Product Specifications
Product Specifications
Part Number |
FDR6580 |
Datasheet |
FDR6580 datasheet |
Description |
MOSFET N-CH 20V 11.2A SSOT-8 |
Manufacturer |
ON Semiconductor |
Series |
PowerTrench® |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
11.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
Rds On (Max) @ Id, Vgs |
9 mOhm @ 11.2A, 4.5V |
Vgs(th) (Max) @ Id |
1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
48nC @ 4.5V |
Vgs (Max) |
±8V |
Input Capacitance (Ciss) (Max) @ Vds |
3829pF @ 10V |
FET Feature |
- |
Power Dissipation (Max) |
1.8W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SuperSOT™-8 |
Package / Case |
8-LSOP (0.130", 3.30mm Width) |
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