Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQPF9P25YDTU
Part Number | FQPF9P25YDTU |
Datasheet | FQPF9P25YDTU datasheet |
Description | MOSFET P-CH 250V 6A |
Manufacturer | ON Semiconductor |
Series | QFET® |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 620 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1180pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F-3 (Y-Forming) |
Package / Case | TO-220-3 Full Pack, Formed Leads |