Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI4590DY-T1-GE3
Part Number | SI4590DY-T1-GE3 |
Datasheet | SI4590DY-T1-GE3 datasheet |
Description | MOSFET N/P CHAN 100V SO8 DUAL |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | N and P-Channel |
FET Feature | - |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 3.4A, 2.8A |
Rds On (Max) @ Id, Vgs | 57 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 50V |
Power - Max | 2.4W, 3.4W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |