Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / MJD112T4G
Part Number | MJD112T4G |
Datasheet | MJD112T4G datasheet |
Description | TRANS NPN DARL 100V 2A DPAK |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
Current - Collector Cutoff (Max) | 20µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
Power - Max | 20W |
Frequency - Transition | 25MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK |