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Product Introduction

RN1968FE(TE85L,F)

Part Number
RN1968FE(TE85L,F)
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
TRANS 2NPN PREBIAS 0.1W ES6
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
4201pcs Stock Available.

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Product Specifications

Part Number RN1968FE(TE85L,F)
Description TRANS 2NPN PREBIAS 0.1W ES6
Manufacturer Toshiba Semiconductor and Storage
Series -
Part Status Obsolete
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6

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