Product Introduction
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Product Specifications
Part Number |
TK12A60W,S4VX |
Datasheet |
TK12A60W,S4VX datasheet |
Description |
MOSFET N CH 600V 11.5A TO-220SIS |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
DTMOSIV |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
600V |
Current - Continuous Drain (Id) @ 25°C |
11.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
300 mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id |
3.7V @ 600µA |
Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
890pF @ 300V |
FET Feature |
Super Junction |
Power Dissipation (Max) |
35W (Tc) |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220SIS |
Package / Case |
TO-220-3 Full Pack |
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