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| Part Number | CMG06(TE12L,Q,M) |
| Datasheet | CMG06(TE12L,Q,M) datasheet |
| Description | DIODE GEN PURP 600V 1A M-FLAT |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 600V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | SOD-128 |
| Supplier Device Package | M-FLAT (2.4x3.8) |
| Operating Temperature - Junction | -40°C ~ 150°C |