Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSP149 E6327
Product Introduction
BSP149 E6327
- Part Number
- BSP149 E6327
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET N-CH 200V 660MA SOT-223
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- SIPMOS®
- Quantity
- 4681pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | BSP149 E6327 |
| Datasheet | BSP149 E6327 datasheet |
| Description | MOSFET N-CH 200V 660MA SOT-223 |
| Manufacturer | Infineon Technologies |
| Series | SIPMOS® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 660mA, 10V |
| Vgs(th) (Max) @ Id | 1V @ 400µA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 430pF @ 25V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223-4 |
| Package / Case | TO-261-4, TO-261AA |
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