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Part Number | IPP180N10N3GXKSA1 |
Datasheet | IPP180N10N3GXKSA1 datasheet |
Description | MOSFET N-CH 100V 43A TO220-3 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 33µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 71W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3 |
Package / Case | TO-220-3 |