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Product Introduction

SI5509DC-T1-E3

Part Number
SI5509DC-T1-E3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N/P-CH 20V 6.1A 1206-8
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
9417pcs Stock Available.

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Product Specifications

Part Number SI5509DC-T1-E3
Datasheet SI5509DC-T1-E3 datasheet
Description MOSFET N/P-CH 20V 6.1A 1206-8
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.1A, 4.8A
Rds On (Max) @ Id, Vgs 52 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 455pF @ 10V
Power - Max 4.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™

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