Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / BFG10W/X,115
Part Number | BFG10W/X,115 |
Datasheet | BFG10W/X,115 datasheet |
Description | RF TRANS NPN 10V 1.9GHZ 4SO |
Manufacturer | NXP USA Inc. |
Series | - |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 10V |
Frequency - Transition | 1.9GHz |
Noise Figure (dB Typ @ f) | - |
Gain | - |
Power - Max | 400mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 50mA, 5V |
Current - Collector (Ic) (Max) | 250mA |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-343 Reverse Pinning |
Supplier Device Package | 4-SO |