Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / IPG20N10S4L35ATMA1
Product Introduction
IPG20N10S4L35ATMA1
- Part Number
- IPG20N10S4L35ATMA1
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET 2N-CH 8TDSON
- Category
- Transistors - FETs, MOSFETs - Arrays
- RoHs Status
- Lead free / RoHS Compliant
- Series
- Automotive, AEC-Q101, OptiMOS™
- Quantity
- 9363pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | IPG20N10S4L35ATMA1 |
| Description | MOSFET 2N-CH 8TDSON |
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 16µA |
| Gate Charge (Qg) (Max) @ Vgs | 17.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1105pF @ 25V |
| Power - Max | 43W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-4 |
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