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Product Introduction
SI3460BDV-T1-GE3
- Part Number
- SI3460BDV-T1-GE3
- Manufacturer/Brand
- Vishay Siliconix
- Description
- MOSFET N-CH 20V 8A 6-TSOP
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- TrenchFET®
- Quantity
- 33pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | SI3460BDV-T1-GE3 |
| Description | MOSFET N-CH 20V 8A 6-TSOP |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 5.1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 8V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
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