Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI1305DL-T1-E3
Part Number | SI1305DL-T1-E3 |
Datasheet | SI1305DL-T1-E3 datasheet |
Description | MOSFET P-CH 8V 0.86A SOT323-3 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 860mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 280 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 290mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-70-3 |
Package / Case | SC-70, SOT-323 |