Product Introduction
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Product Specifications
Part Number |
IRF5803D2PBF |
Datasheet |
IRF5803D2PBF datasheet |
Description |
MOSFET P-CH 40V 3.4A 8-SOIC |
Manufacturer |
Infineon Technologies |
Series |
FETKY™ |
Part Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40V |
Current - Continuous Drain (Id) @ 25°C |
3.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
112 mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
37nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1110pF @ 25V |
FET Feature |
Schottky Diode (Isolated) |
Power Dissipation (Max) |
2W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-SO |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
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