Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFH7110TR2PBF
Part Number | IRFH7110TR2PBF |
Description | MOSFET N CH 100V 11A PQFN5X6 |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3240pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PQFN (5x6) |
Package / Case | 8-TQFN Exposed Pad |