Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRLD120

Product Introduction

IRLD120

Part Number
IRLD120
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CH 100V 1.3A 4-DIP
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
2862pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number IRLD120
Description MOSFET N-CH 100V 1.3A 4-DIP
Manufacturer Vishay Siliconix
Series -
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 270 mOhm @ 780mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)

Latest Products for Transistors - FETs, MOSFETs - Single

TK8Q60W,S1VQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 8A IPAK

TK12A60W,S4VX

Toshiba Semiconductor and Storage

MOSFET N CH 600V 11.5A TO-220SIS

TK16A60W,S4VX

Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A TO-220SIS

TK20C60W,S1VQ

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A I2PAK

TK16C60W,S1VQ

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 15.8A I2PAK

TK14C65W,S1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A I2PAK