Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SSM6N16FUTE85LF
Part Number | SSM6N16FUTE85LF |
Datasheet | SSM6N16FUTE85LF datasheet |
Description | MOSFET 2N-CH 20V 0.1A US6 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 100mA |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id | 1.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 9.3pF @ 3V |
Power - Max | 200mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |