Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI7900AEDN-T1-GE3
Product Introduction
SI7900AEDN-T1-GE3
- Part Number
- SI7900AEDN-T1-GE3
- Manufacturer/Brand
- Vishay Siliconix
- Description
- MOSFET 2N-CH 20V 6A PPAK 1212-8
- Category
- Transistors - FETs, MOSFETs - Arrays
- RoHs Status
- Lead free / RoHS Compliant
- Series
- TrenchFET®
- Quantity
- 14pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | SI7900AEDN-T1-GE3 |
| Description | MOSFET 2N-CH 20V 6A PPAK 1212-8 |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Rds On (Max) @ Id, Vgs | 26 mOhm @ 8.5A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 Dual |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
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