Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI7998DP-T1-GE3

Product Introduction

SI7998DP-T1-GE3

Part Number
SI7998DP-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET 2N-CH 30V 25A PPAK SO-8
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
6183pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number SI7998DP-T1-GE3
Datasheet SI7998DP-T1-GE3 datasheet
Description MOSFET 2N-CH 30V 25A PPAK SO-8
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 25A, 30A
Rds On (Max) @ Id, Vgs 9.3 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 15V
Power - Max 22W, 40W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual

Latest Products for Transistors - FETs, MOSFETs - Arrays

SQ9945AEY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 60V 3.7A 8SOIC

SQ9945BEY-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 5.4A

TMC1340-SO

Trinamic Motion Control GmbH

MOSFET 2N/2P-CH 30V 8SOIC

TPC8207(TE12L)

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 6A 8-SOP

TPC8207(TE12L,Q)

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 6A 8-SOP

TPC8208(TE12L,Q)

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 5A 8-SOP

Related Products