Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / AOWF10N65
Part Number | AOWF10N65 |
Datasheet | AOWF10N65 datasheet |
Description | MOSFET N-CH 650V 10A TO262F |
Manufacturer | Alpha & Omega Semiconductor Inc. |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 5A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1645pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 25W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | - |
Package / Case | TO-262-3 Full Pack, I²Pak |