Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / UPA2825T1S-E2-AT
Part Number | UPA2825T1S-E2-AT |
Datasheet | UPA2825T1S-E2-AT datasheet |
Description | MOSFET N-CH 30V 8HVSON |
Manufacturer | Renesas Electronics America |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta), 16.5W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | - |
Package / Case | 8-PowerWDFN |