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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPN70R360P7SATMA1
Part Number | IPN70R360P7SATMA1 |
Datasheet | IPN70R360P7SATMA1 datasheet |
Description | MOSFET N-CH 700V 12.5A SOT223 |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ P7 |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 700V |
Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 16.4nC @ 10V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 517pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 7.2W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223 |
Package / Case | TO-261-3 |