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Product Introduction

BSB104N08NP3GXUSA1

Part Number
BSB104N08NP3GXUSA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 80V 13A 2WDSON
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
OptiMOS™
Quantity
1607pcs Stock Available.

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Product Specifications

Part Number BSB104N08NP3GXUSA1
Datasheet BSB104N08NP3GXUSA1 datasheet
Description MOSFET N-CH 80V 13A 2WDSON
Manufacturer Infineon Technologies
Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 40V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON

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