Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / BCR108SH6327XTSA1

Product Introduction

BCR108SH6327XTSA1

Part Number
BCR108SH6327XTSA1
Manufacturer/Brand
Infineon Technologies
Description
TRANS 2NPN PREBIAS 0.25W SOT363
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
4012pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number BCR108SH6327XTSA1
Description TRANS 2NPN PREBIAS 0.25W SOT363
Manufacturer Infineon Technologies
Series -
Part Status Last Time Buy
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) -
Frequency - Transition 170MHz
Power - Max 250mW
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-6

Latest Products for Transistors - Bipolar (BJT) - Arrays, Pre-Biased

PEMB14,115

Nexperia USA Inc.

TRANS 2PNP PREBIAS 0.3W SOT666

PEMB15,115

Nexperia USA Inc.

TRANS 2PNP PREBIAS 0.3W SOT666

PEMB16,115

Nexperia USA Inc.

TRANS 2PNP PREBIAS 0.3W SOT666

PEMB17,115

Nexperia USA Inc.

TRANS 2PNP PREBIAS 0.3W SOT666

PEMB18,115

Nexperia USA Inc.

TRANS 2PNP PREBIAS 0.3W SOT666

PEMB19,115

Nexperia USA Inc.

TRANS 2PNP PREBIAS 0.3W SOT666