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Product Introduction

2SK3906(Q)

Part Number
2SK3906(Q)
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 600V 20A TO-3PN
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
8568pcs Stock Available.

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Product Specifications

Part Number 2SK3906(Q)
Description MOSFET N-CH 600V 20A TO-3PN
Manufacturer Toshiba Semiconductor and Storage
Series -
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 330 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4250pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3

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