Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RSD100N10TL
Part Number | RSD100N10TL |
Datasheet | RSD100N10TL datasheet |
Description | MOSFET N-CH 100V 10A CPT3 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 133 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 20W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | CPT3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |