Product Introduction
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Product Specifications
Part Number |
RN1973(TE85L,F) |
Datasheet |
RN1973(TE85L,F) datasheet |
Description |
TRANS 2NPN PREBIAS 0.2W US6 |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Part Status |
Active |
Transistor Type |
2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) |
100mA |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Resistor - Base (R1) |
47 kOhms |
Resistor - Emitter Base (R2) |
- |
DC Current Gain (hFE) (Min) @ Ic, Vce |
120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
Frequency - Transition |
- |
Power - Max |
200mW |
Mounting Type |
Surface Mount |
Package / Case |
6-TSSOP, SC-88, SOT-363 |
Supplier Device Package |
US6 |
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