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Product Introduction

IPB60R060C7ATMA1

Part Number
IPB60R060C7ATMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 650V 35A TO263-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
CoolMOS™ C7
Quantity
5355pcs Stock Available.

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Product Specifications

Part Number IPB60R060C7ATMA1
Datasheet IPB60R060C7ATMA1 datasheet
Description MOSFET N-CH 650V 35A TO263-3
Manufacturer Infineon Technologies
Series CoolMOS™ C7
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60 mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 400V
FET Feature -
Power Dissipation (Max) 162W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

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