Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRF1902PBF
Product Introduction
IRF1902PBF
- Part Number
- IRF1902PBF
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET N-CH 20V 4.2A 8-SOIC
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- HEXFET®
- Quantity
- 4946pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | IRF1902PBF |
| Datasheet | IRF1902PBF datasheet |
| Description | MOSFET N-CH 20V 4.2A 8-SOIC |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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