Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTN32P60P
Part Number | IXTN32P60P |
Datasheet | IXTN32P60P datasheet |
Description | MOSFET P-CH 600V 32A SOT227 |
Manufacturer | IXYS |
Series | PolarP™ |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 350 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 196nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 11100pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 890W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B |
Package / Case | SOT-227-4, miniBLOC |