Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RJK2006DPE-00#J3
Part Number | RJK2006DPE-00#J3 |
Datasheet | RJK2006DPE-00#J3 datasheet |
Description | MOSFET N-CH 200V 40A LDPAK |
Manufacturer | Renesas Electronics America |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 59 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-LDPAK |
Package / Case | SC-83 |