Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RND030N20TL
Part Number | RND030N20TL |
Datasheet | RND030N20TL datasheet |
Description | MOSFET N-CH 200V 3A CPT3 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 870 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 5.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 850mW (Ta), 20W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | CPT3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |