Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI5511DC-T1-E3
Part Number | SI5511DC-T1-E3 |
Datasheet | SI5511DC-T1-E3 datasheet |
Description | MOSFET N/P-CH 30V 4A 1206-8 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4A, 3.6A |
Rds On (Max) @ Id, Vgs | 55 mOhm @ 4.8A, 4.5V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.1nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 15V |
Power - Max | 3.1W, 2.6W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | 1206-8 ChipFET™ |