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| Part Number | IPD50R3K0CEAUMA1 | 
| Datasheet | IPD50R3K0CEAUMA1 datasheet | 
| Description | MOSFET N-CH 500V 1.7A PG-TO-252 | 
| Manufacturer | Infineon Technologies | 
| Series | CoolMOS™ CE | 
| Part Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 500V | 
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 13V | 
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 400mA, 13V | 
| Vgs(th) (Max) @ Id | 3.5V @ 30µA | 
| Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 10V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 84pF @ 100V | 
| FET Feature | - | 
| Power Dissipation (Max) | 26W (Tc) | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | PG-TO252-3 | 
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |